发明名称 Dynamic shift register utilizing CMOS dual gate transistors
摘要 A shift register using dual gate transistors is described. Each stage consists of a P-channel and and N-channel dual gate transistor interconnected to provide both an inverting function and a switching function. The gates of each stage of one set of alternate stages are clocked in one phase with a clocking voltage alternating between a low level and a high level and its inverse. The gates of each stage of the other set of alternative stages are clocked in the opposite phase with the clocking voltage and its inverse.
申请公布号 US4472821(A) 申请公布日期 1984.09.18
申请号 US19820374587 申请日期 1982.05.03
申请人 GENERAL ELECTRIC COMPANY 发明人 MAZIN, MOSHE;ENGELER, WILLIAM E.
分类号 G11C19/18;(IPC1-7):G11C19/28;H03K17/04;H03K17/68;H03K19/01 主分类号 G11C19/18
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