| 摘要 |
PURPOSE:To obtain a garnet thin film structure having high quality and exellent light-guide characteristics, by forming an iron garnet single crystal film on an amorphous material interposing an iron-free garnet single crystal film therebetween. CONSTITUTION:An amorphous substance 12 (e.g. SiO2, Si3N4, Al2O3, etc.) is deposited on an arbitrary substrate 11 by evaporation, and a garnet single crystal thin film 14 is formed on the lattice-like surface of the amorphous layer e.g. by graphoepitaxy method, etc. An iron-garnet layer is deposited on the obtained iron-free garnet single crystal thin film 14 e.g. by sputtering, etc., and the iron-garnet layer is heat-treated at a relatively low temperature (600- 1,200 deg.C) without melting the film to obtain the objective iron-garnet, single crystal film 15. |
