| 摘要 |
PURPOSE:To enable to perform the accurate control over the aperture rotation in a short period by a method wherein, when the position of projection of image of the first formed aperture which constitutes an exposing device on the second aperture is changed and the beam rotation is controlled from the rectangular distorted condition of the rectangular charged beam projected on the sample face, a reflected electric signal outputted from the mark provided on the sample face is utilized. CONSTITUTION:The wafer 324 whereon an exposure is to be performed is placed on the moving stage 321 which constitutes variable molding electron beam exposing device, and an electron mirror with built-in first and second molding apertures 306 and 307 is provided respectively. Then, the explanation pertaining to the wafer 324 is given as follows using the wafer 401 which is shown in the diagram. A gold mark 402 is provided on the wafer 324, the end part representing points 407 and 408 of the long sides 404 and 405 of the rectangular electron beam 403 is passed through said gold mark 402, and then other end part represented parts 410 and 411 is passed through, thereby enabling to obtain two reflecting electron signals. Thus, two signals are obtained, the rotation of beam can be obtained based on the difference between the above and the quantity of rotation can also be controlled. |
