| 摘要 |
PURPOSE:To enable to seal without deteriorating high frequency characteristics by matching to the characteristics of a semiconductor element, a microwave monolithic integrated circuit or a microwave transistor contained in a package in the impedance of input/output leads. CONSTITUTION:The peripheral edge of a metal member 3 is formed in a notched step, and an alumina member 5 is fusion-bonded by a method of brazing to the lower surface of the step. Metal leads 1 of sheet shape for input/output, or a metal lead 2 for bias are mounted on the member 5. Further, a fixing alumina member 4 is mounted thereon, and a metal cap 6 is hermetically sealed. The lower surface of the cap 6, the leads 1 and the notched surface of the member 3 are in parallel, and the members 4, 5 are filled therebetween in a package seal in a ''triplate'' structure of a distributed circuit. When the characteristic impedance of the triplate structure is matched to the input/output impedance of a semiconductor element, the impedance matching can be performed. |
