| 摘要 |
<p>PURPOSE:To obtain the semiconductor thin film of high quality by a method wherein in the process of fabricating the semiconductor crystal film on an insulating film, the insulating film is selectively formed on a single crystal semiconductor substrate at first and the whole surface including this film is coated with a film of low-melting metal including a semiconductor or an alloy film of a semiconductor and low-melting metal and then it is annealed to perform solid-phase epitaxial growth of the semiconductor over the whole surface. CONSTITUTION:An Si single crystal substrate 1 is subjected to heat treatment to produce an SiO2 film, a half of which divided by a straight border on the center of the substrate 1 is then removed by etching up to its end. Next, the surface of the substrate 1 is treated with the mixed solution of H2O and HF in the ratio 20:1 and is inserted into a vacuum chamber where the natural oxidation on the substrate 1 is removed. After that, the inside of chamber is made to be vacuum of 10<-8>Torr and the whole surface of the substrate 1 including a half of the film 2 is coated with an Sn-Si alloy film 3 including about 15% of Si using electron beam. Next, the substrate 1 is transferred into an electric oven flowing N2 gas and is heated up to 350 deg.C for about 100hr to perform the solid-phase epitaxial growth. Consequently, the single crystal thin film of high quality can be obtained over the whole surface.</p> |
