| 摘要 |
PURPOSE:To ease stress by thermosetting resin film pattern applied on the surface of chip region of semiconductor wafer and enhance reliability by forming a thermosetting resin film pattern using the directional etching by the reactive oxygen ion. CONSTITUTION:A polyimide resin film is formed covering the entire part of semiconductor wafer 1 having completed wafer processing, and a polyimide resin film pattern 11 can be formed by electric reactive ion etching using oxygen. A semiconductor device is manufactured by the dicing process, die bonding process, wire bonding process and resin sealing process. Since the side etching does not occur by the directional etching, the edge surface of resin film pattern can be formed almost perpendicularly and formation of tapered surface can be prevented. |
