发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide a window having a size close to a desired size, by etching a part of a film, which is provided on a substrate with a resist film as a mask, then temporarily stopping the etching, coating the part by a resist film after heat treatment, and performing the etching again. CONSTITUTION:On a silicon substrate 1, an oxide film 2, whose etching speed is slow, is deposited. An oxide film 3, whose etching speed is fast, is deposited on the film 2. Photoresist 4 is applied on the film 3, and a window is selectively provided. Then wet etching is performed. When the oxide film 3 is etched and the oxide film 2 is slightly etched, the etching is once stopped. Then, heat treatment of the substrate and the photoresist is performed, and the photoresist 4 is deformed, so as to cover the side surfaces 5 of the window in the oxide films 2 and 3. Thereafter, the etching is started again, and the oxide film 2 is completely etched.
申请公布号 JPS59148339(A) 申请公布日期 1984.08.25
申请号 JP19830023066 申请日期 1983.02.15
申请人 NIPPON DENKI KK 发明人 SHINOZAKI EIJI;TSUTSUI HIROAKI
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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