| 摘要 |
PURPOSE:To provide a vapor deposition device which can supply a substantial amt. of modifying gas with good controllability by a constitution so that the 1st modifying gas and the 2nd modifying gas ionized or activated by a magnetron type gas discharger are supplied in a vessel disposed therein with a vapor source and a substrate. CONSTITUTION:A substrate 4 to be subjected to vapor deposition is heated with a heater 5 and a negative bias voltage is impressed thereon from a power source 6 to heat and evaporate the Si vapor source disposed opposite to the substrate 4 in a bell-jar 1 which is connected to a vacuum pump (not shown in the figure) via an evacuating path 3 having a butterfly valve 2 to form a vapor deposition vessel. The 1st modifying gas such as gaseous hydrogen ionized or activated by a magnetron type DC ion gun 18 as a magnetron type gas discharger is supplied into the bell-jar at the same instant as said evaporation, and the 2nd modifying gas such as gaseous oxygen or the like which is ionized or not ionized is separately introduced through a gas introducing pipe 11 into the said jar. A thin film of hydrogen-contg. amorphous silicon, etc. incorporated therein with oxygen is thus formed on the substrate. |
