| 摘要 |
PURPOSE:To obtain an SiO2 film at a low temperature without using Hg vapor by a method wherein compound gas containing oxygen is mixed in high order silane gas indicated by the general formula SinH2n+2 {(n) is the integer of 2 or more at this time}, the gas thereof is thermally decomposed under irradiation of the beam of the wavelength of 300nm or less, and is deposited as SiO2 on a substrate. CONSTITUTION:A heater 20 consisting of a halogen lamp, etc. is arranged at the outer peripheral part of the bottom side of a reaction tube 10 manufactured of quartz and having a raw material gas supply part 55 and an exhaust gas outlet part 90 respectively at both the edge parts, and a discharge tube 50 having an ultraviolet rays reflecting plate 53 manufactured of Al on the back is arranged at the outer peripheral part of the top side. Moreover, a supporting base 30 manufactured of Si is accommodated in the reaction tube 10, a substrate 40 of quartz glass, Si, sapphire, SUS, etc. is put thereon, a thermocouple 45 is fixed thereto, and a terminal is led out outside. High order silane gas 60 of disilane, trisilane, etc. indicated by SinH2n+2, carrier gas 70, O2 or compound gas 80 containing oxygen of N2O, etc. are flowed into a supply part 55, and a beam of 300nm or less is irradiated thereto heating the substrate 40 at 100-400 deg.C. |
