| 摘要 |
PURPOSE:To obtain an ion sensor which is stable for a long period of time by providing an ion-sensitive film on the extension wiring of a metallic gate on the gate insulating film of an insulated FET by separating said film in a way as to permit electrical coupling. CONSTITUTION:A gate insulating film 102, source 103 and drain 104 of an ion sensitive FET are formed via a silicon insulating film 302 on a sapphire substrate 301 and a metallic electrode 401 is provided on the film 102, and a source electrode 107 and drain electrode 108 are provided on a field oxide film 105. An ion sensitive film 106 is formed on the top end part 106 of the electrode 401. The ion sensitive film part 106 and the FET part are separated by a metallic wiring part 402 and is electrically connected via an electrical coupling means. An ion sensor which is stable for a long period of time is thus obtd. |
