Tapped integrated resistor

摘要

The invention relates to an integrated resistor formed in an epitaxial layer and provided with at least one tap. In order to reduce field effect action between the resistor and the epitaxial layer, the voltage on the two ends of the epitaxial layer underneath the resistor tracks the voltage on the two ends of the resistor. Moreover, the epitaxial layer is short-circuited by means of buried layers at the locations where the resistance layer also exhibits a short-circuit, such as underneath the contact area of the tap.