| 摘要 |
PURPOSE:To reduce the formation of alloy pits at a corner and to contrive the stabilization of a Schottky barrier diode to withstand voltage by a method wherein the figure of the main surface of a Schottky barrier part is formed into a polygon or a circular form surrounded with an obtuse angle. CONSTITUTION:A Schottky barrier diode utilizing the rectifying action of a Schottky barrier, which is created at the contact part between a semiconductor and a metal, is the one whereon a Schottky battier was formed by making a metal 4 such as Al, etc., alloy into one part of the surface of an n type Si layer 3 which was epitaxially grown on a p<-> type Si substrate 1 through the intermediary of an N<+> type buried layer 2. At an Al-Si alloy part 7 to make this Schottky barrier, the acuter the angle of a corner is, the more alloy pits are easy to concentrate at the circumference part of the barrier region, but the corner is obtusely formed (90 deg. 135 deg.) by forming the pattern of the Schottky barrier part into an octagon, the formation of alloy pits at the corner part is equalized, current concentration is prevented, the Vf of the Schottky barrier diode is stabilized and leak current is reduced. Besides, this pattern for the barrier is not always limited to one in an octagon. Patterns in an hexagon and other polygons having a large number of angles or ones in a circular form and a rectangle can be used. |
