| 摘要 |
PURPOSE:To form a connecting window, and to solve problems in which the window is expanded and undesird etching reaching a foundation insulating film is generated by coating a wiring layer with a coating insulating film through a bias sputtering method, applying and forming a second insulating film, etching property thereof differs, and selectively etching both insulating films in succession. CONSTITUTION:A lower layer Al wiring layer 3 is formed on a SiO2 film 2. A SiO2 film 4 and a phosphorus silicate glass film 5 on the film 4 are applied and formed through a bias sputtering method. Narrow projecting sections 6 are formed on a foundation wiring 3 in the bias sputtering films 4, 5. A resist film pattern 7 is formed, and the PSG film 5 is wet-etched by an etching liquid of a HF group. When side etching is generated previously to some extent through isotropic etching, the projecting sections 6 can be removed completely. The resist 7 is softened and hung through baking treatment to a substrate, and a side etching section is covered. A desired fine widow can be bored through the etching of the SiO2 film 4. A resist is removed, Al for an upper-layer wiring is evaporated on the substrate, and an upper-layer Al wiring layer is obtained through patterning. |
