发明名称 ADDRESS DECODER CIRCUIT IN SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To decrease the area of the entire circuit and chip size by forming an inverter forming a false level signal in an address decoder circuit to reduce the occupied area of the address buffer circuit and the area of wiring area to the address decoder circuit. CONSTITUTION:When internal address signals ay1-ayn of reverse level are applied to wirings 4y1-4yn of a true system from an external address buffer circuit 3, the signals ay1-ayn are inverted by inverters 5y1-5yn to form signals ay1'-ayn' of false level. The signals ay1'-ayn' of the false level are applied respectively to wirings 4y1'-4yn' of the bar system respectively. Thus, the inverters 5y1-5yn are formed in the region surrounded by chain lines not formed for any circuit element conventionally. Thus, even if the inverters 5y1-5yn forming the address signals ay1'-ayn' of the false level are provided in an address decoder circuit, the area of the address decoder circuit is not increased.
申请公布号 JPS59135691(A) 申请公布日期 1984.08.03
申请号 JP19830007240 申请日期 1983.01.21
申请人 HITACHI SEISAKUSHO KK 发明人 OONISHI YOSHIAKI
分类号 G11C11/413;G11C11/34;G11C11/401;G11C11/408 主分类号 G11C11/413
代理机构 代理人
主权项
地址