发明名称 |
DEPOSITING AND CURING METHOD FOR GATE ELECTRODE MATERIAL FORTHIN FILM FIELD EFFECT TRANSISTOR |
摘要 |
<p>The gate electrode in an inverted field effect transistor (FET) is fabricated with titanium to provide an FET which is particularly suitable for use as the switching element in a matrix addressed liquid crystal display. More particularly, the resist employed in gate electrode patterning is plasma ashed in an oxygen atmosphere to toughen the titanium gate material and render it more amenable to subsequent processing steps.</p> |
申请公布号 |
JPS6272167(A) |
申请公布日期 |
1987.04.02 |
申请号 |
JP19860180273 |
申请日期 |
1986.08.01 |
申请人 |
GENERAL ELECTRIC CO <GE> |
发明人 |
HARORUDO JIYOOJI PAAKUSU;JIYOOJI EDOWAADO POTSUSHIN |
分类号 |
C23C14/08;C23C14/06;C23C14/14;G02F1/133;G02F1/136;G02F1/1368;H01L21/336;H01L27/12;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
C23C14/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|