INTEGRATED MOS SEMICONDUCTOR CIRCUIT,申请号EP19810101324-传众专利搜索

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发明名称	INTEGRATED MOS SEMICONDUCTOR CIRCUIT
摘要
申请公布号	EP0036494(B1)	申请公布日期	1984.07.25
申请号	EP19810101324	申请日期	1981.02.24
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	HOFFMANN, KURT, DR.;KANTZ, DIETER, DIPL.-ING.
分类号	G11C11/407;G05F3/20;G11C11/34;H01L21/822;H01L27/04;H01L27/10;(IPC1-7):G05F3/20	主分类号	G11C11/407
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