发明名称 Method for improved resolution of patterning using binary masks with pupil filters
摘要 A photolithography lens system is disclosed. The system has several elements perpendicularly aligned to an optical axis. The elements include a light source that generates an exposing light, a first lens that has a front focal plane and a pupil plane, and a binary mask between the light source and the first lens. The binary mask is placed at the front focal plane of the first lens. A pupil filter is placed at the pupil plane. Finally, a second lens is provided that has a front focal plane at substantially the same position as the pupil plane. The second lens also has a back focal plane where a semiconductor wafer is placed.
申请公布号 US6549272(B1) 申请公布日期 2003.04.15
申请号 US20000553199 申请日期 2000.04.20
申请人 INTEL CORPORATION 发明人 CHANDHOK MANISH;BARNETT BRANDON C.
分类号 G03B27/42;G03F7/20;(IPC1-7):G03B27/54 主分类号 G03B27/42
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