| 摘要 |
PURPOSE:To form a non-injection region at the step of crystal growth, and to improve the reproducibility of characteristics, yield on manufacture and reliability largely by forming a narrow region of a mesa stripe only in a section in the vicinity of the end surface of an element and melting back the section together with an active layer on buried growth. CONSTITUTION:A mesa stripe 8 and etched grooves 6, 7 holding the mesa stripe are formed in parallel in the <011> direction to a DH wafer. A pattern, width thereof in the central section of an element is 5mum, width thereof at both end sections is 3mum and width thereof differs in the laser resonant-axis direction, is used as a photo-resist mask pattern forming the mesa stripe. An active layer 4 is also left in the end sections of the element. P- And N-InP current block layers 9, 10 are laminated on sections except the upper surface of a mesa at the central section of the mesa stripe 8 in a buried growth process, and a P-InP buried layer 11 and an electrode layer 12 are laminated. |
