| 摘要 |
A composite wafer bonded to a carbide substrate is formed by preparing a dispersion of super-hard crystals and carbon black in a temporary binder such as paraffin, by preparing a base mixture of carbon fiber, carbon black and filler in the temporary binder, and by preparing an additional mixture of cobalt and carbon black in the temporary binder. The dispersion, base mixture and additional mixture are compacted to form an intermediate composite, the additional mixture forming a layer on one surface of the base mixture. The intermediate composite is heated to allow for the removal of the temporary binder and the infiltration of liquefied silicon into the composite which is then reaction sintered to form the composite wafer.
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