| 摘要 |
PURPOSE:To obtain a single crystal having excellent electric characteristics with few defects by manufacturing the single crystal so that the whole of the crystal may not emerge out of a liquid sealing layer during the pulling growth when the compd. semiconductor single crystal is grown by an LEC method. CONSTITUTION:When a III-V group semiconductor single crystal such as GaAs is grown by the LEC method, raw materials and a liquid sealing agent 5 are contained in a crucible 3 in a highly pressurized vessel 1. The inside of the vessel is substituted for an about 30 atm gaseous N2 and is heated by a heater 2 to adjust the temps. of a raw molten liquid 7 and the sealing liquid layer 5 to a specified seeding temp. A pulling crystal 6 is grown by using a seed crystal 4. On this occasion, the diameter of the crystal 6 is enlarged as much as possible in comparison with the caliber of the crucible 3, or the caliber D2 of the crucible 3 in the neighborhood of the liquid layer 5 is made smaller than the caliber D1 in the neighborhood of the molten liquid 7, so that the grown crystal may not emerge out of the liquid layer 5 during the growing period of the crystal 6. The dissociation of volatile components is thereby prevented and the generation of vacant lattices and dislocation are reduced. |
