Etched-source static induction transistor

摘要

A gate-source structure and fabrication method for a static induction transistor. The method and the device are embodied by the epitaxial layer of, for example, high resistivity p-type semiconductor material grown on an epitaxial layer of high resistivity n-type semiconductor material. A silicon dioxide layer with source and gate windows is formed on the p-type epitaxial layer. Source grooves are formed in the p-type epitaxial layer at source window locations and the grooves are diffused with n-type impurities to form a diffusion region which extends to connect with the n-type epitaxial layer. Source and gate electrodes are formed in the source and gate windows.