| 摘要 |
The invention relates to integrated circuits, and more particularly to CMOS technology circuits in which transistors T1 are formed directly in the substrate 10 and complementary transistors T2 are in compartments 12 with opposite conductivity type. When the circuit incorporates non-volatile memory elements, overvoltages appear on the substrate during the writing to or erasure of memory and which modify the threshold voltages of the transistors which are not inside the compartments. There are then provided in parallel with these transistors T1 a pair of transistors T3, T4 in series, the one controlled by the same voltage as the relevant transistor T1 and the other by a voltage W indicating the presence of an overvoltage on the substrate. <IMAGE>
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