| 摘要 |
PURPOSE:To prevent the release of an insulating film to be caused by steam oxidation afterwards, by heat-treating a silicon substrate of single crystal having an insulating film of the single crystal on the surface. CONSTITUTION:A magnesia spinel film is formed on the surface of a silicon substrate, and heat-treated in an oxygen atmosphere or in an inert gas atmosphere containing oxygen at high temperature >1,050 deg.C. Consequently, release of magnesia spinel film to be caused by steam oxidation afterwards can be prevented, and the constitution of silicon film of single crystal/insulating film of single crystal/silicon substrate of single crystal can be formed easily and securely. |
