| 摘要 |
<p>PURPOSE:To obtain high ON/OFF ratio by separately forming TFT drain and source electrodes through an insulating film to prevent between both electrodes from shortcircuiting due to the remaining aluminum, thereby reducing an OFF current at light emitting time. CONSTITUTION:A gate electrode 30 of 4,000Angstrom thick, an insulating film 50 of 4,000Angstrom thick, an amorphous silicon film 40 of 1,000Angstrom thick, a drain electrode 10 of 1mum thick, an insulating film 80 of 4,000Angstrom thick, a source electrode 20 of 1mum thick, and a display electrode 60 of 1,000Angstrom thick are sequentially formed on a glass substrate 70. The advantageous point is to first form the electrode 10, to then form the film 80 in the shape of enclosing the electrode 10 and to then form the electrode 20 used also as a light shielding layer. Thus, even if a slight malfunction occurs at the time of patterning the electrode 10, the insulating film is formed thereon, no shortcircuit occurs with the electrode 20, and since the electrode 20 becomes a light shielding layer for the film 40, an OFF current due to light emission does not rise, and ON/OFF ratio rises by the order of ten times.</p> |
