发明名称 Method and device for providing an ohmic contact of high resistance on a semiconductor at low temperatures
摘要 A method and device are disclosed which allows an ohmic electrical contact with P-type semiconductor material using metallic foil at low temperature without significant diffusion of the metal into the semiconductor. The contact exhibits opposition to physical separation and has a predetermined electrical resistance.
申请公布号 US4451968(A) 申请公布日期 1984.06.05
申请号 US19810299694 申请日期 1981.09.08
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 JENSEN, MILLARD;LEVINE, JULES D.
分类号 H01L21/603;H01L31/0224;H01L31/18;(IPC1-7):H01L31/04 主分类号 H01L21/603
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