发明名称 |
Method and device for providing an ohmic contact of high resistance on a semiconductor at low temperatures |
摘要 |
A method and device are disclosed which allows an ohmic electrical contact with P-type semiconductor material using metallic foil at low temperature without significant diffusion of the metal into the semiconductor. The contact exhibits opposition to physical separation and has a predetermined electrical resistance.
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申请公布号 |
US4451968(A) |
申请公布日期 |
1984.06.05 |
申请号 |
US19810299694 |
申请日期 |
1981.09.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JENSEN, MILLARD;LEVINE, JULES D. |
分类号 |
H01L21/603;H01L31/0224;H01L31/18;(IPC1-7):H01L31/04 |
主分类号 |
H01L21/603 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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