| 摘要 |
PURPOSE:To form an element separated region with less step difference and without limiting a pattern width by a method wherein multiple crystal silicon film is removed by means of isotropic plasma etching process subject to specific conditions. CONSTITUTION:A silicon oxide film 12 and a silicon nitride film 13 are formed on the surface of a silicon semiconductor substrate 11 while after forming a hole 14, another silicon oxide film 15, a multiple silicon film 16 are further formed. After forming a silicon thin film 19, a photoresist pattern 17 similar to but larger than the etching hole 14 is formed on the hole 14 and an isotropic plasma etching process is performed from the multiple silicon film 16 under the gaseous condition for faster etching process than that for the film 19 to form a flat type element separated region. Through these procedures, the pattern width of the element separated region may be made unlimited and the shape of the region may be made gentle. |
