| 摘要 |
PURPOSE:To obtain a film which has 80% or higher of visible light transmittance and 100OMEGA/square or less of electric conductivity by adding Br, or Br and B2O3 into a light transmittance conductive film which mainly contains oxidized tin. CONSTITUTION:An evaporation source, to which 0.001-3% of Br or Br and B2O3 is added to SnO, is prepared, an electron beam is emitted, and an SnO film 2, to which Br or Br and B are added, is formed on a light transmittance insulating substrate 1. The SnO is converted to SnO2 by treating it at 300-600 deg.C in O2, microcrystallized, contracted, an acceptor type vacant hole is formed by the Br having large ion radius, and a thin film which has approx. 10-30OMEGA/ square of sheet resistance is obtained. The electric conductivity of the conventional acceptor type or doner type light transmittance conductive film of SnO2 or ITO cannot be reduced in thickness of 500-10<3>Angstrom to 10<3>OMEGA/square or lower, but according to this configuration, the acceptor density can be improved by the addition of the Br, 80% or higher of transmittance and 10-30OMEGA/square of sheet resistance can be performed in the thickness of 1,000Angstrom or thinner. |
