| 摘要 |
An electrically erasable programmable read-only memory, comprising a plurality of floating gate tunneling metal oxide semiconductor field effect transistors, does not require an addressing transistor in each cell. Instead, the gate decoder applies a sufficiently negative gate voltage to unselected ones of the transistors so that they are turned off regardless of the amount of charge on their floating polysilicon gates. Writing and erasure of data is performed without disturbing data in memory cells not selected for writing or erasure despite the absence of a series connected addressing transistor.
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