| 摘要 |
PURPOSE:To prevent the generation of parasitic channels by a method wherein impurities of the same conductive type as a substrate are ion-implanted along the peripheral parts of an element forming region along with an element separating region on the semiconductor substrate. CONSTITUTION:An SiO2 film 32, an Al film 33 and a resist film 34 are coated on P type Si substrate 31. An element separating region on the Si substrate 31 is etched by a mask consisting of the Al film 33 and the resist film 34 for forming groove parts 35. The peripheral parts 37 on the surface of an element forming region surrounded with the groove parts 35 are exposed by performing an etching on a part of the side faces of the Al film 33 and, after that, the resist film 34 is removed. Thereafter, impurities of the same conductive type as the substrate are ion-implanted in the substrate 31 using the Al film 33 as the mask. At this time, ion implanted layers 36 are formed at the peripheral parts 37 as well, along with the groove parts 35. Then, insulating films 38 such as an SiO2 film, etc., are buried in the groove parts 35 and, after that, the desired element is formed on the element forming region. |
