| 摘要 |
PURPOSE:To ensure high insulating performance without increasing the film thickness of an insulated layer which gives an evil effect to the transfer characteristics of magnetic bubble, by forming the magnetic bubble memory elements by dividing approximately at the center part a pattern covering both a signal line and a ground line via a polymer resin insulated layer into two parts. CONSTITUTION:A magnetic bubble transfer auxiliary pattern 20' is divided into two patterns 20a and 20b at both ends via a space 20c formed approximately at the center part of the full length of the pattern 20' as a deficient part. In this case, a gap G of the space 20c has about 1mum width approximately equal to the width of the shorter side of the pattern 20'. In such a constitution, the insulated breakdown strength can be greatly improved up to >=200V between patterns 20a and 20b of the bar pattern 20'. Thus it is possible to reduce the generating factor down to about <=1% for the dielectric breakdown under the normal operating conditions. At the same time, no deterioration is produced to the swapping gate characteristics owing to the distance 20c formed at the center part of the pattern 20'. |
