| 摘要 |
PURPOSE:To improve surge-resisting characteristics of a wide dynamic-range by small chip size by constituting the integrated circuit by a first transistor with an emitter, a base and a collector and a second transistor formed in an insulating isolation region. CONSTITUTION:The transistor Q2 is connected for protecting the transistor Q1. With the transistor Q2, the emitter is connected to the emitter of the transistor Q1 by a conductor, the base is opened, and the collector is shared with the collector of the transistor Q1. The emitter 10 of the transistor Q1 and the emitter 11 of the Q2 are formed in the insulating isolation region 4 formed to a semiconductor substrate, and connected by the aluminum wiring 7. The base 9 of the transistor Q1 is connected to an aluminum wiring 6 through a contact window 9'. With the base 8 of the transistor Q2, only a contact window 8' is coated with aluminum, and it is not connected to any positions and is brought to an open state. The collectors of the transistors Q1, Q2 are used is common and an aluminum wiring 5 is connected to them. |
