| 摘要 |
PURPOSE:To form a thin film having an optional compsn. ratio on a substrate with good reproducibility by disposing plural targets which permit independent impression of a voltage in a chamber, measuring the intensity ratio of the excitation light from each target in the stage of sputtering and adjusting the sputtering condition of each target. CONSTITUTION:A W target 12 and an Si target 13 are disposed in a chamber 4, and are connected respectively to power sources 18, 19 which are adjustable in voltage. A GaAs substrate 8 is mounted, via a slide shutter 11, to a holder 7. The inside of the chamber 4 is evacuated to high vacuum and gaseous Ar is introduced therein. An electric field is applied between the holder 7 and the targets 12, 13 to generate a sputtering phenomenon. The radiation light of a W atom and an Si atom is measured with an ammeter 17, via a monochromator 15 and a photoelectron multiplier 16 on the outside of a quartz window 14 provided on the side wall of the chamber and the voltage of the power sources 18, 19 on the targets 12, 13 is regulated according to the intensity ratio of the light radiated from W and Si. A thin film consisting of the metal having a specified compsn. ratio is thus formed on the substrate 8. |
