| 摘要 |
PURPOSE:To provide a titled device which can decrease the damage on a sample by electron, ion etc. by the constitution wherein the discharge voltage for the purpose of ion sputtering is gradually increased to a predetermined voltage at a suitable speed with respect to the sample to be coated thereon. CONSTITUTION:A sample 2 is fixed on a sample holder 3, and is placed on a sample base 4 in a vacuum chamber 1 of a main body. The inside of the chamber 1 is maintained under 10<-1>-10<-2>Torr pressure by operating a rotary pump 5 in order to coat a conductive thin film on the sample 2. A target electrode 6 is provided in the chamber 1 and is connected, via an insulator 7, to a high voltage rectifier 9 and a high voltage transformer 10 by means of a high voltage cord 8. A unit 11 which increases gradually the voltage to be supplied to the primary side of the transformer 10 as shown by a graph only in the stage of starting is provided in the above-mentioned constitution. The damage of the sample 2 by the plasma generated in the chamber 1 is decreased if the voltage is gradually increased by using such unit 11. |
