| 摘要 |
<p>Each transistor of an array is selectively programmable with a laser beam which is precisely directed to the transistor. The laser beam and the biasing voltage on a control electrode common to all transistors causes charge to be selectively placed in a trapped-charge region. In one embodiment of the invention, the laser beam is incident on a floating gate and the control electrode to provide photoelectrons which, depending on the bias potential on the control electrode, produce a net negative or positive charge in the floating gate. In another embodiment, the laser beam is incident on the control electrode to heat underlying insulator material and provide a conductive path for charge between the trapped-charge region and the appropriately biased control electrode.</p> |
