| 摘要 |
PURPOSE:To facilitate the fabrication of a precise pattern by forming a resist pattern containing trialkylsilyl groups or dimethylphenyl group over specified quantity on an organic high molecular film. CONSTITUTION:An organic high molecular film is formed on a material to be etched. Next, a resist coating consisting of high molecules containing trialkylsilyl group or dimethylphenylsilyl group is formed on said organic high molecular film. Next, a desired pattern containing trialkylsilyl group or dimethylphenylsilyl group of 1X10<16>/cm<3> or more is formed on the resist film, thereby obtaining enough resistance to etching of the organic layer as the first layer. Next, using this resist film on which a pattern is formed as a mask, the organic high molecular film is operated dry etching. Then using the residual organic high molecular film as a mask, a material to be etched is etched. |
