| 摘要 |
PURPOSE:To enable to form electrode wirings in a multilayer type without generating disconnection at step parts by a method wherein a metal layer and a resin layer are formed in order on the whole surface from the upper part of grooves formed in a layer of phosphorus silicate glass, etc., and plasma etching is performed in succession from the upper part thereof to remove the metal layer on the insulator layers. CONSTITUTION:A second insulator layer 3 is formed on a semiconductor substrate 2 having a first insulator layer 1, and the grooves 4 of patterns corresponding to the parts of electrode wirings are opened. After an Al layer 5 is formed, polyimide or an organic resin material of high viscosity to be used for a photo resist is applied on the Al layer 5 thereof to form a resin layer 6. Then etching is performed from the surface of the resin layer 6 according to the plasma ions of Ar, etc., to expose the surfaces of the protruding parts 5' of the Al layer 5, and etching is proceeded moreover to expose the second insulator layers 3. Overetching is performed as it is to remove completely the protruding parts 5' of the Al layer 5, and when the resins on the Al layers 5'' are removed by oxygen plasma, the electrode wirings consisting of the Al layers 5'' having flat surface structure and surrounded by the second insulator layers 3 can be obtained. |
