| 摘要 |
PURPOSE:To contrive fining-down by forming a U-shaped groove in a high-concentration impurity diffusion region in a self-alignment manner, burying the groove by an applying insulator and forming a buried field region. CONSTITUTION:A thermal oxide film 2 is removed selectively through a dry etching method using a Freon group gas while using a photo-resist pattern 3 as a mask. Boron ions are implanted as an impurity, and an injection region 4 is formed. The implanted impurity is activated through heat treatment, and a high-concentration diffusion layer 5 is formed. A semiconductor substrate 1 is etched in an anisotropic manner by a chlorine group gas while using the thermal oxide film 2 as a mask, and the groove 6 is formed. A silanol group-coated insulating film 7 is applied and formed by rotary applicator, and vitrified completely at a high temperature. The applied insulating film and the thermal oxide film 2 in an active region are removed, and an element isolation region of predetermined size is formed. |
