| 摘要 |
<p>A method of producing a semiconductor device comprising a bipolar transistor and a Schottky barrier diode (e.g., an SBD transistor), comprises the steps of: selectively etching an insulating layer (27) formed on an N-type silicon epitaxial layer (23) so as to form an emitter electrode contact window (29c); forming a polycrystalline silicon layer (30) on the exposed portion of a P-type base region (25) in the window (29c); introducing N-type impurities into the P-type base region (25) through the polycrystalline silicon layer (30) in the window (29c); after the impurity-introducing step, selectively etching the insulating layer (27) so as to form a base electrode contact window (29b) and a contact window (29d) for the electrode of the SBD; carrying out heat treatment for redistribution of the introduced impurities so as to form an emitter region (35); and forming an emitter electrode (36c) on the polycrystalline silicon layer (30) and the electrode (36d) of the SBD directly on the silicon epitaxial layer (23).</p> |
