发明名称 DISTORTION SENSOR
摘要 PURPOSE:To obtain the distortion sensor of high degree of accuracy and high reliability at low cost by a method wherein an insulating resin layer, a resistive layer having Ni, Cr and Si as main ingredients, a resistive layer having Ti as a main ingredient, and a conductive layer having Cu as a main ingredient are formed by lamination on a beam material successively, and the prescribed pattern is formed by performing a photoetching. CONSTITUTION:After the pattern forming surface of the beam body 1 has been flattened by polishing and cleaned, polyimide resin is uniformly applied on the pattern forming surface. Subsequently, the above is hardened by heating and an insulating resin layer 14 consisting of polyimide resin is formed. Then, the first resistive layer 15 is obtained by forming an Ni-Cr-Si layer on the insulating resin layer 14 by performing a sputtering, a Ti film layer is formed as the second resistive layer 16, and a Cu film layer is formed on said Ti film layer as a conductive layer 17. After the prescribed pattern has been formed on the above laminated body, the pattern as shown in the diagram (a) is obtained by performing an etching on the Cu, Ti and Ni-Cr-Si located on the region other than the pattern above-mentioned. Subsequently, the pattern as shown in the diagram (b) is obtained by performing an etching on strain gage resistive bodies 8a- 8d and the Cu layer of the upper layer of a temperature sensor 9.
申请公布号 JPS5975676(A) 申请公布日期 1984.04.28
申请号 JP19820185855 申请日期 1982.10.22
申请人 TOKYO DENKI KK;TOSHIBA KK 发明人 SAKAMOTO KOUICHIROU;MIZUSHIMA SHINICHI;TAKENO SHIYOUZOU
分类号 G01B7/16;G01L1/22;H01L29/84 主分类号 G01B7/16
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