发明名称 FORMING METHOD FOR RESIST PATTERN
摘要 PURPOSE:To obtain the resist pattern of high accuracy simply by keeping a substrate to be treated at a temperature approximately same as a developer and developing the substrate. CONSTITUTION:A large number of the substrates to be treated 1 are dipped in an isothermal liquid 6, and stabilized at a fixed temperature. The substrate to be treated 1 changed into a fixed temperature is dipped in the developer 1 set at a fixed liquid temperature, and developed. Since the substrate is kept at an approximately uniform temperature, the temperature of the developer is stabilized even when the substrate is developed continuously, and the resist pattern of high accuracy can be formed on the substrate with excellent reproducibility. A gas and a solid, which do not react with a resist and are changed into a fixed temperature, may be used as a medium for a change into a fixed temperature.
申请公布号 JPS5972136(A) 申请公布日期 1984.04.24
申请号 JP19820182177 申请日期 1982.10.19
申请人 TOSHIBA KK 发明人 KATOU YOSHIHIDE
分类号 H01L21/30;G03F7/30;H01L21/027 主分类号 H01L21/30
代理机构 代理人
主权项
地址