| 摘要 |
PURPOSE:To obtain a uniform thin film by a method wherein a plurality of Si wafers are stood on edges and contained in a transparent quartz container in which a thin film is formed by photo-exciting low temperature vapor phase reaction and reactive gas is introduced toward wafers and inert gas is introduced toward an inner wallof the container and moreover ultra-violet rays from sources provided around the outside of the container are focused at the center part of the reaction container. CONSTITUTION:A reaction container 51 is made of synthetic quartz glass which has good permeability of short wave light and its two ends are sealed by stainless steel flanges 52 to which a reaction gas supply system and an exhaust system. A pair of Si wafers 54 are adhered on their backs and then a plurality of these Si wafer pairs are stood on edges and arranged on a quartz boat 53 and the boat 53 is contained in the container 51. A heating source 57 composed of four W harogen infra-red lamps is provided along an outside circumference of the container 51 and four ultra-violet lamps 55 are provided between them. The light from the ultra-violet lamps 55 is focused at the center part of the container 51 by a condensing lens 56. Moreover, reactive gas from a nozzle 58 is blown against the wafers 54 and inert gas from a nozzle 59 is blown against the inside wall of the container 51. |
