发明名称 FREQUENCY VARIABLE SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain stable wavelength variable effect by disposing a member having piezoelectric effect parallel to the surface formed with a diffraction grating of a semiconductor laser having a periodic structure of the grating in a resonator to enable to apply an AC voltage. CONSTITUTION:A diffraction grating 2 is formed on a substrate 1, and to avoid the influence of the substrate 1, a waveguide layer 3 is formed, an active layer 4, a buffer layer 5, a clad layer 6, and electrodes 7, 8 are formed. In order to vary the oscillating frequency, only one layer 10 having piezoelectric effect is newly added to the DFB laser operating by modulating a current source 9. The original osicllation vertical mode spectrum is formed to be sufficiently narrow in width of spectrum by using the stabilized current source as the current source 12 to the semiconductor laser, a signal source 11 for applying a voltage to the layer 10 of the piezoelectric material is used to vary the oscillating wavelength of the laser so that the period of the diffraction grating of the DFB laser may vary.
申请公布号 JPS5966183(A) 申请公布日期 1984.04.14
申请号 JP19820177241 申请日期 1982.10.07
申请人 MATSUSHITA DENKI SANGYO KK 发明人 FUJITA TOSHIHIRO;SERIZAWA HIROMOTO
分类号 H01S5/00;H01S5/026;H01S5/06;H01S5/12 主分类号 H01S5/00
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