发明名称 OXIDE PIEZOELECTRIC MATERIAL AND MANUFACTURE THEREOF
摘要 PURPOSE:To produce the titled material with larger mechanical quality coefficient, less temperature dependability of electric characteristics and time lapse change of resonance frequency further reducing the temperature coefficient of resonance frequency proportionally to the depth of a circular cylindrical material in the diametral direction by a method wherein the mean crystalline particle diameter and baking temperature of an oxide piezo electric material are specified within specific range. CONSTITUTION:The basic constituents of this oxide piezoelectric material are Pb(SbNb)0.5O3-PbTiO3-PbZrO3 and the mean crystalline particle diameter thereof is 1.5-4 times compared with that in case of the maximum specific gravity. On the other hand, a mixture containing various metallic oxides such as Pb, Ti, Zr, Sb and Nb is formed and baked at the temperature 20-50 deg.C higher than the baking temperature for the maximum specific gravity to produce the oxide piezo electric material with said composition. This material may be composed of said basic constitutents only or may contain other auxiliary constituents such as MnO2, NiO, CoO, ThO2, CeO2, La2O3, Bi2O3 and the like in addition to the basic constituents.
申请公布号 JPS5957484(A) 申请公布日期 1984.04.03
申请号 JP19820167663 申请日期 1982.09.28
申请人 TOSHIBA KK 发明人 WATANABE ZENSAKU;YOKOYAMA KATSUNORI;YAMASHITA YOUHACHI;YOSHIDA SEIICHI
分类号 C04B35/49;C01G33/00;C04B35/493;H01L41/18;H01L41/187;H01L41/39 主分类号 C04B35/49
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