| 发明名称 |
Controlling secondary breakdown in bipolar power transistors |
| 摘要 |
A power transistor design that eliminates thermally initiated secondary breakdown in fast, double-diffused transistors is described. The power dissipation capability is made independent of collector voltage, avoiding safe area restrictions below 0.9 BVCBO.
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| 申请公布号 |
US4441116(A) |
申请公布日期 |
1984.04.03 |
| 申请号 |
US19810282490 |
申请日期 |
1981.07.13 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
WIDLAR, ROBERT J. |
| 分类号 |
H01L27/07;H01L29/10;H01L29/73;(IPC1-7):H01L27/02;H01L29/72 |
主分类号 |
H01L27/07 |
| 代理机构 |
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代理人 |
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| 主权项 |
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