| 摘要 |
PURPOSE:To prevent the generation of redistribution of a lifetime killer as well as to simplify the manufacture of the titled semiconductor device by a method wherein, after an aperture to be used for formation of a mesa groove has been formed on an insulating film, the lifetime killer is diffused utilizing the aperture for formation of the mesa groove on the main surface located on the anode side. CONSTITUTION:Insulating films 6 and 6 such as an insulating film and the like are formed on both main surfaces, and apertures 15 and 16, to be used for formation of a mesa groove, are formed on the insulating films 6 and 6. Gold is vapor-deposited on the aperture 15 located on the anode side as a lifetime killer, and after the gold has been diffused by performing a heat treatment at 850- 950 deg.C or thereabout for 60-90min, mesa grooves 7 and 8 are formed by performing an ordinary method. Insulation protection films 9 and 10 are formed in said mesa grooves 7 and 8, electrodes 11-13 are formed and the manufacture of a pellet is completed. |
