| 摘要 |
PURPOSE:To form contact holes with favorable precision by a method wherein positioning marks of two kinds are formed at the same time with patterning for formation of an element. CONSTITUTION:The electrode wiring pattern is formed on a silicon substrate, and the inside coinciding positioning mark 24 consisting of cross-shaped polycrystalline silicon, the outside coinciding positioning mark 25 are formed in a region surrounded with a field oxide film 22 interposing oxide films 23 between them. When size of the electrode wiring pattern and the marks 24, 25 becomes larger than the designed value, the mark 31 of a photo mask 32 is made to coincide with the mark 25. When size becomes smaller than the designed size, by making a mark 30 to coincide with the mark 24, the intervals B', A' are reduced, and coinciding precision is enhanced. |
