| 摘要 |
PURPOSE:To prevent the generation of the crack of a resin sheathing film due to the application of thermal stress by exposing one part of a substrate, applying and forming a foundation layer and applying and forming a resin sheathing coating the foundation layer and a substrate exposed section. CONSTITUTION:Circuit elements 13-15 are film-formed or loaded to the upper surface of the substrate 12, a plurality of lead terminals 16 are fitted on the lower side of the substrate 12, and the foundation layer 17 and the epoxy group resin sheathing 18 are applied and formed. The sheathing 18 is brought to the state in which it is connected to the upper surface of the substrate 12 at a plurality of positions through the elements 13-15 and the layer 17, and bonded in the exposed sections 19 and 20 of the lower surface of the substrate 12. Accordingly, since each thermal expansion coefficient of the substrate 12, the foundation layer 17 and the resin sheathing 18 differs, stress generated is dispersed by connections and bondings, and concentration generating cracks to the resin sheathing 18 is not generated. |
