| 摘要 |
Materials(a) are free from dislocations and, during the addn. of dopants(b), at least one other material(c) is added. Material(c) has no electrical effect on the semiconductor(a), but at least partly compensates the lattice stresses created in the semiconductor(a) by dopant(b). Material(c) is pref. added during the mfr. of poly Si(a) by CVD using SiHCl3 or SiCl4 in H2 employed as a carrier gas, the Si being deposited on an Si substrate heated by electrical resistance. Alternatively, materials(a,b,c) are placed in a crucible and a highly doped rod(a,b,c) is made by the Czochralski process. Another pref. alternative is to diffuse materials(b,c) simultaneously into semiconductor wafers(a). For Si(a) doped with In(b), material(c) is pref. carbon; whereas for Si doped with Sb, material(c) is pref. C and/or oxygen. Used in mfr. of optoelectronic devices, esp. infrared sensors consisting of Si doped with In; or solar cells. Lattice stresses in the Si caused by high dopant concn. create noise in the devices; and the invention minimises such noise.
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