Process for the production of structures for integrated semiconductor circuits by reactive ion etching

摘要

The process of the invention uses as the mask (2) negative lacquer structures (2) produced by electron-beam writing, and, before the reactive ion etching of the structures (1,4) which, for example, serve as conductor patterns, an additional dry etching process is carried out for a short time in an oxygen atmosphere at low pressure and in the same parallel plate reactor in order to produce steep lacquer flanks (2). This provides the possibility of shortening the conductor structures (1,4) anisotropically, i.e. without undercutting. The process is applied in the metallisation of integrated circuits by electron-beam writing. <IMAGE>