| 摘要 |
PURPOSE:To obtain an epitaxial layer with no defect by a method wherein the surface of an impurity diffused layer is lapped into the mirror face, a predetermined thickness is removed, and then epitaxial growth is performed. CONSTITUTION:A P diffused layer is selectively formed on an N type Si substrate using a normal technique. The exposed surface of the diffused layer is mechanically and chemically lapped into the mirror face using silicic acid powder, whereby the surface is removed in depth of ca. 5mum. An Si epitaxial layer is formed thereon, so that the epitaxial layer with no defect can be obtained. By so doing, it becomes possible to manufacture SCRs for large power from the epitaxial wafers and to improve the yield even in other bipolar elements. |
